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PD -5.046
CPV362M4F
IGBT SIP MODULE
Features
* Fully isolated printed circuit board mount package * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve
3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 D3 15 10 Q6 D6
Fast IGBT
D5 16
Q5
Product Summary
7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE VISOL PD @ T C = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw
Max.
600 8.8 4.8 26 26 3.4 26 20 2500 23 9.1 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m)
Units
V
A
V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module
Typ.
--- --- 0.1 20 (0.7)
Max.
5.5 9.0 --- ---
Units
C/W g (oz)
9/16/97
CPV362M4F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES V FM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Temperature Coeff. of Breakdown Voltage --- 0.72 Collector-to-Emitter Saturation Voltage --- 1.41 --- 1.66 --- 1.42 Gate Threshold Voltage 3.0 --- Temperature Coeff. of Threshold Voltage --- -11 Forward Transconductance 2.9 5.0 Zero Gate Voltage Collector Current --- --- --- --- Diode Forward Voltage Drop --- 1.4 --- 1.3 Gate-to-Emitter Leakage Current --- ---
Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 1.7 IC = 4.8A VGE = 15V See Fig. 2, 5 --- V IC = 8.8A --- IC = 4.8A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 4.8A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V Max. Units Conditions 45 IC = 4.8A 6.0 nC VCC = 400V 20 See Fig. 8 --- TJ = 25C --- ns IC = 4.8A, VCC = 480V 300 VGE = 15V, RG = 50 320 Energy losses include "tail" and --- diode reverse recovery --- mJ See Fig. 9, 10, 18 0.70 --- TJ = 150C, See Fig. 10,11, 18 --- ns IC = 4.8A, VCC = 480V --- VGE = 15V, RG = 50 --- Energy losses include "tail" and --- mJ diode reverse recovery --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 50 A TJ = 25C See Fig. 15 VR = 200V 8.0 TJ = 125C 138 nC TJ = 25C See Fig. 16 di/dt = 200A/s 360 TJ = 125C --- A/s TJ = 25C See Fig. --- TJ = 125C 17
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 30 4.0 13 49 22 200 214 0.23 0.33 0.45 48 25 435 364 0.93 340 63 5.9 37 55 3.5 4.5 65 124 240 210
Notes: Repetitive rating; VGE =20V, pulse width limited by max. junction temperature. ( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10H,
Pulse width 5.0s, single RG= 50, ( See fig. 19 ) shot. Pulse width 80s; duty factor 0.1%.
CPV362M4F
9 8 7 2.63
2.05 1.75 1.46 1.17 0.88 0.58 0.29 0.00
6 5 4 3 2 1 0 0.1 1 10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25 oC TJ = 150 oC
10
I C, Collector-to-Emitter Current (A)
TJ = 150 oC
10
TJ = 25 oC
1 1
V GE = 15V 20s PULSE WIDTH
10
1 5 6 7 8 9
VCC = 50V 5s PULSE WIDTH
10 11 12 13 14
V CE, Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Total Output Power (kW)
LOAD CURRENT (A)
T c = 9 0 C T j = 1 25 C P ow er F ac tor = 0 .8 M o d ula tio n D ep th = 1 .15 V c c = 50 % o f R a ted V o lta g e
2.34
CPV362M4F
10 2.5
VGE = 15V 80 us PULSE WIDTH I C = 9.6A
8
V CE, Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
2.0
6
4
I C = 4.8A
1.5
2
I C = 2.4A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
T C , Case Temperature ( C) C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
T h erm al R esp onse (Z th JC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
PD M
0 .1
SINGLE PULSE (T H ERMA L RES PO NSE)
Notes : 1. Du ty fact or D = t
t
1 t 2
1
/t
2
0.01 0.000 01
2. P e ak TJ = P D M x Z th JC + T C
0.00 01
0 .00 1
0.01
0.1
1
10
t 1 , R e ct an g ula r P u ls e D ur at io n (s e c)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
CPV362M4F
1000
800
VGE, Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 4.8A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
Coes Cres
4
0 1 10 100
0 0 6 12 18 24 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.46
VCC = 480V VGE = 15V TJ = 25 C I C = 4.8A
10
RG = 50Ohm 50 VGE = 15V VCC = 480V
Total Switching Losses (mJ)
0.45
Total Switching Losses (mJ)
IC = 9.6A
1
0.44
IC = 4.8A
0.43
IC = 2.4A
0.42 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance() (Ohm)
TJ , Junction Temperature ( ) C
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
CPV362M4F
2.0
1.5
I C , C ollect or-to-E m itte r C urrent (A )
Total Switching Losses (mJ)
RG = 50Ohm 50 T J = 150 C VCC = 480V VGE = 15V
10 0
VG E E 20 V G= T J = 125 C
SA FE O PE RAT ING AR EA
10
1.0
0.5
0.0 0 2 4 6 8 10
1 1 10 100 1000
I C , Collector-to-emitter Current (A)
V C E , C o llec to r-to -E m i tte r V olta ge (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Insta ntaneo us F orw ard Cu rrent - I F (A )
10
TJ = 15 0C TJ = 12 5C TJ = 2 5C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F orwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
CPV362M4F
100 100
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
80
VR = 2 0 0 V TJ = 1 2 5 C T J = 2 5 C
IF = 16 A
t r r - (n s)
60
I F = 8 .0 A
I IR R M - (A )
I F = 16 A
10
40
IF = 8 .0A I F = 4.0 A
IF = 4.0 A
20
0 100
di f /d t - (A / s)
1000
1 100
1000
di f /dt - (A / s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
400
VR = 2 0 0 V TJ = 1 2 5 C T J = 2 5 C
300
di(re c)M/d t - (A / s)
Q R R - (nC )
I F = 1 6A
200
IF = 4.0 A
1000
IF = 8.0A I F = 1 6A
I F = 8 .0 A
100
IF = 4.0 A
0 100 100 100
di f / dt - (A /s )
1000
1000
di f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
CPV362M4F
Same t ype device as D.U.T. 9 0% V ge + Vg e
Vce 80% of Vce 430F D.U.T. Ic 1 0% V ce Ic 5% Ic td (off) tf 90 % Ic
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E off =
t1 +5 S
VceicIc tdt V ce d
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G ATE VO LTA G E D .U .T. 1 0% +V g +V g
trr Ic
Q rr =
trr id dt Ic dt tx
tx 10% V cc V ce Vcc 10% Ic 9 0% Ic DUT V O LTA G E AN D C URR E NT Ipk Ic
10 % Ir r V cc
V pk Irr
td( on)
tr
5% Vc e t2 Vce dt E on = V c e ieIc dt t1 t2 DIO D E RE V E RS E RE C O V ER Y EN ER G Y t3
DIO DE RE CO V E RY W AV E FO RM S
Er ec =
t4 V d idIc t dt Vd d t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
CPV362M4F
V g G ATE S IG N AL DE VICE UNDE R TE S T CURR EN T D .U .T.
VO L TA G E IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 10 00V 50V 60 00 F 100 V V c*
D.U.T.
RL = 0 - 480V
480V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
CPV362M4F
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 22 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Case Outline IMS-2
62.43 (2.458) 3.91 ( .154) 2X 53.85 ( 2.120)
7.87 (.310) 5.46 ( .215)
21.97 (.865)
1
2
3
4
5
6
7
8
9 10 1 1 1 2 13 14 1 5 1 6 17 18 19
0.38 (.015)
NO TE S: 1. Tolerance unless otherwis e spec ified 0.254 (.010) . 2. Controlling D imension: Inch. 3. Dimens ions ar e shown in Millimeter ( Inc hes) . 4. Term inal numbers are shown for refer enc e only.
3.94 (.155) 1.27 ( .050) 3.05 0.38 (.120 .015) 0.76 (.030) 13X 0.51 (.020) 6.10 (.240)
4.06 0.51 (.160 .020) 5.08 (.200) 6X
1.27 (.050) 13X 2.54 (.100) 6X
IMS-2 Package Outline (13 Pins)
D im e n s io n s in M illim e te rs a n d (In c h e s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/97

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